Design and implementation of Ka-band AlGaN/GaN HEMTs
نویسندگان
چکیده
منابع مشابه
BCB-bridged Ka-band MMICs using In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs
The InAlAs/InGaAs metamorphic HEMT (mHEMT) two-stage Ka-band amplifier and DC-30 GHz distributed SPST switch were designed and fabricated using low-k benzocyclobutene (BCB) bridged technology. This fabrication technology takes the advantages of its low dielectric permittivity (2.7), low loss tangent (0.008), low curing temperature, low water up-take, and simple manufacturing process. The MMIC f...
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7b.4 Effects of Via Layout on AlGaN/GaN HEMTs at Ka-band
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ژورنال
عنوان ژورنال: JOURNAL OF INFRARED AND MILLIMETER WAVES
سال: 2012
ISSN: 1001-9014
DOI: 10.3724/sp.j.1010.2011.00255